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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= -45V- BDW56 = -60V- BDW58 = -80V- BDW60 *Complement to Type BDW55/57/59 APPLICATIONS *Designed for use in professional equipment such as telecommunication and etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER BDW56 VCBO Collector-Base Voltage BDW58 BDW60 BDW56 VCER Collector-Emitter Voltage RBE= 1k BDW58 BDW60 BDW56 VCEO Collector-Emitter Voltage BDW58 BDW60 VEBO IC ICM PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE -45 -60 -100 -45 -60 -100 -45 -60 -80 -5 -1 -1.5 8 175 -65~175 V A A W V V V UNIT BDW56/58/60 THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 10 100 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER BDW56 VCEO(SUS) Collector-Emitter Sustaining Voltage BDW58 BDW60 VCE(sat) VBE(on) ICBO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current BDW56 ICBO Collector Cutoff Current BDW58 BDW60 IEBO hFE-1 hFE-2 hFE-3 fT Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain--Bandwidth Product IC= -0.5A; IB= -50mA B BDW56/58/60 CONDITIONS MIN -45 TYP. MAX UNIT IC= -10mA ;IB=0 B -60 -80 -0.5 -1.0 -0.1 -10 -10 -10 -10 25 40 25 75 250 V V V A IC= -0.5A ; VCE= -2V VCB= VCBOmax;IE= 0 VCB= -30V; IE=0;TJ= 150 VCB= -45V; IE=0;TJ= 150 VCB= -70V; IE=0;TJ= 150 VEB= -5V; IC=0 IC= -5mA ; VCE= -2V IC= -150mA ; VCE= -2V IC= -500mA ; VCE= -2V IC= -50mA;VCE= -5V;ftest= 35MHz A A MHz Switching times td tr tstg tf Delay Time Rise Time Storage Time Fall Time 30 40 500 80 ns ns ns ns IC= 0.15A; IB1= -IB2= 15mA; VCC= 10.2V isc Websitewww.iscsemi.cn 2 |
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